TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
Low Noise Audio Amplifier Applications
Recommended for first stages of EQ and M.C. head amplifiers.
High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
High breakdown voltage: VGDS = −40 V
Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
Drain power dissipation
Storage temperature range
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.21 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Gate cut-off current
Gate-drain breakdown voltage
VGS = −30 V, VDS = 0
V (BR) GDS
VDS = 0, IG = −100 μA
VDS = 10 V, VGS = 0
VDS = 10 V, ID = 0.1 μA
Gate-source cut-off voltage
Forward transfer admittance
VDS = 10 V, VGS = 0, f = 1 kHz